PART |
Description |
Maker |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆,拉德硬,SEGR耐,N沟道功率MOSFET 3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation] http://
|
PV7F2Y0NSG-201 PV7F2T0NSG-201 PV7F2Y0NSG-203 PV7F2 |
Vandal and Water Resistant, TEMPERATURE: -20°C to 70°C, CONTACT RESISTANCE: 50mOHM Max. Vandal and Water Resistant, TEMPERATURE: -20掳C to 70掳C, CONTACT RESISTANCE: 50mOHM Max. Vandal and Water Resistant, TEMPERATURE: -20隆?C to 70隆?C, CONTACT RESISTANCE: 50mOHM Max.
|
http:// E-SWITCH
|
HI3507 |
Linux development environment
|
Hisilicon
|
NR-10044 NR-15044 NR-20034 NR-20045 NR-20044 NR-15 |
Rugged Environment Connector
|
Amphenol Corporation
|
JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85 Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
R0E00008AKCE00EP9 |
Microcomputer Development Environment System
|
Renesas Electronics Corporation
|
ZF-1072D-10B |
designed to operate in a military environment.
|
JMK Inc.
|
R0E00008AKCE00EP64 |
Microcomputer Development Environment System
|
Renesas Electronics Corporation
|
FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|